HIGH PURITY TANTALUM MATERIAL, TANTALUM TARGET USING THE SAME, THIN FILM FORMED BY USING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a tantalum material having purity higher than heretofore and a high purity tantalum target and also to obtain a thin film effective in inhibition of leakage current and a semiconductor device. SOLUTION: The high purity tantalum material has a composition containing <=50 ppm oxygen, <=0.05 ppm iron, <=0.05 ppm nickel, and <=0.05 ppm chromium and can be obtained by melting. The tantalum target is prepared by using the above high purity tantalum material. The thin film is formed by using this tantalum target. Further, the semiconductor device has this thin film at least in part.