| 摘要 |
PROBLEM TO BE SOLVED: To obtain a large carrier mobility, by orienting specific surface of a poly-Si layer constituting a TFT which is a semiconductor device formed on an insulating substrate, such as a glass substrate, etc. SOLUTION: After a surface protective film is deposited on a glass substrate 1 by on atmospheric pressure CVD method while the substrate 1 is maintained at 480 deg.C, poly-Si films 2, 3, and 4 are obtained by receystallizing an LPCVD film by projecting ultraviolet pulse laser light using XeC as a gas source upon the LPCVD film from the upper surface of the protective film. When the intensity of the laser light is adjusted to >=400 mJ/cm<2> , the principal preferred orientation of the poly-Si film becomes (111). Then, after an SiO2 film formed as the surface protective film is removed a photoetching process is performed for forming the poly-Si films 2, 3, and 4 recrystallized by the laser light in island- like shapes, an SiO2 film 5 for gate insulating film is deposited by the atmospheric pressure CVD method. Consequently, a thin film semiconductor device having large carrier mobility can be obtained. |
