发明名称 |
Generation of a loose planarization mask having relaxed boundary conditions for use in shallow trench isolation processes |
摘要 |
A method of forming an improved planarization mask for shallow trench isolation process area in integrated circuit manufacturing is disclosed. The planarization mask is generated automatically by using actual mask data as a reference. The invention discloses an algorithm which measures the geometric and relative separation distances of the active areas and performs the necessary merging, deletion and differential biasing to produce the planarization mask which has relaxed geometric boundaries, thereby allowing low cost and simplified manufacturing.
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申请公布号 |
US5926723(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19970813008 |
申请日期 |
1997.03.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG, LARRY YU |
分类号 |
H01L21/3105;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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