发明名称 Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
摘要 The temperatures of scavenger-emitting kit parts in a high-density plasma (HDP) etching system are elevated to or close to respective steady state equilibrium temperatures so that scavenger chemistry and rates remain substantially the same on a wafer-to-wafer basis. A relatively inert warm-up plasma is turned on within the HDP chamber during idle time periods that precede or occur between executions of a predefined plasma-processing recipe so as to raise the temperatures of chamber-internal kit parts.
申请公布号 US5925212(A) 申请公布日期 1999.07.20
申请号 US19950524135 申请日期 1995.09.05
申请人 APPLIED MATERIALS, INC. 发明人 RICE, MICHAEL;GROECHEL, DAVID W.;CRUSE, JAMES;COLLINS, KENNETH S.
分类号 C23F4/00;H01J37/32;H01L21/302;(IPC1-7):C23F1/02;C23C14/00;B44C1/22;C03C15/00 主分类号 C23F4/00
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