发明名称 |
Metal layer patterns of a semiconductor device and a method for forming the same |
摘要 |
The present invention provides metal layer patterns of a semiconductor device which reduces the effect of the current induced by the plasma in the etching process and prevents the device characteristics from being deteriorated, by a method for forming a photomask to pattern metal layers of a semiconductor device including the steps of: designing base metal line patterns, the base metal line patterns being required for the proper operation of the semiconductor device; expanding the base metal line patterns outwardly by an expanding distance; designing a dummy metal line patterns by reversing the expanded base metal line patterns; and designing a final metal line patterns of the semiconductor device by combining the base metal line patterns and the dummy metal line patterns.
|
申请公布号 |
US5926733(A) |
申请公布日期 |
1999.07.20 |
申请号 |
US19970832349 |
申请日期 |
1997.04.02 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HEO, YEON CHEOL |
分类号 |
G03F1/08;H01L21/027;H01L21/28;H01L21/302;H01L21/3065;H01L21/3205;H01L21/3213;H01L23/528;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
G03F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|