发明名称 Low noise amplifier
摘要 A low noise amplifier includes an input matching means of an input stage and an output matching means of an output stage, a common source transistor and a common gate transistor serially connected between the input matching means and the output matching means, a first inductor connected between said common source transistor and common gate transistor a second inductor connected between the common point of said common source transistor and common gate transistor and the output stage of said common gate transistor. Therefore, the low noise amplifier allows the points of GAMMA opt and Gmax to be closer to each other so that the noise and input gain simultaneous matching is performed, thereby improving the performance.
申请公布号 US5926069(A) 申请公布日期 1999.07.20
申请号 US19970822851 申请日期 1997.03.24
申请人 SAMSUNG ELECTRONICS, CO. LTD. 发明人 KO, BEOM-KYU;LEE, KWY-RO
分类号 H03F3/193;H03F1/22;H03F3/183;(IPC1-7):H03F3/191 主分类号 H03F3/193
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