| 摘要 |
A photomask producing method according to the present invention segments a parent pattern 36 which is an alpha -magnification of an original pattern 27 which is a beta -magnification of a circuit pattern 35 into alpha lengthwise and breadthwise, thereby forming parent patterns p1 to PN on data. The parent patterns p1 to PN are written on a substrate at equal magnification by using an electron beam lithography system, thereby producing master reticles R1 to RN. Reduced images of the parent patterns of the master reticles R1-RN are transferred on a substrate while performing screen linking, thereby producing working reticle 34. This photomask producing method can form an original pattern with a high precision and in a short period of time. <IMAGE> |
