| 摘要 |
<p>The present invention pertains to the field of M-type microwave devices, wherein the purpose of said invention is to provide a more efficient use of the working surface in field emitters, to increase the reliability thereof, to improve the field emission stability and to extend the operation duration of the device. To this end, the structure of an M-type micro-wave device comprises an anode as well as a cathodic node arranged coaxially inside the anode, wherein said cathodic node is made in the shape of a cylindrical rod that comprises on its surface a plurality of elements consisting in flat (film-type) field emitters and secondary emitters for generating a first and a secondary emission. The normal to the flat field emitters is not parallel to the cathode axis and defines with said axis an angle wider than zero degrees. The end of a field emitter is protected with thin tunnel-effect layer of a dielectric comprising impurities that consist in various materials, including impurities which consist in analogous materials or in materials with a reduced work function.</p> |
