发明名称 Timing scheme for memory arrays
摘要 A DRAM includes a data input buffer having a first input terminal coupled to data I/O pins, a second input terminal coupled to a column address buffer, a third input terminal coupled to a column address strobe buffer, and an output terminal coupled to a column decoder. When reading a selected cell of the DRAM, the first row address and the first column address are latched on the falling edge of the row address strobe signal from the address input pins into a row address buffer and from the I/O pins into the data input buffer, respectively, of the DRAM. While the row address is decoded and used to select a row of memory cells of the DRAM, the column address is decoded and used to select one of the cells from the selected row. Data corresponding to the selected cell is forwarded to the I/O pins on the first falling edge of the column address strobe signal. By latching both the first row address and the first column address on the falling edge of the row address strobe signal, the access time of the first column address is hidden.
申请公布号 US5923610(A) 申请公布日期 1999.07.13
申请号 US19970957518 申请日期 1997.10.24
申请人 ADVANCED ARRAY CORP. 发明人 TE, SINTIAT
分类号 G11C7/00;G11C7/22;G11C11/4076;(IPC1-7):G11C7/00 主分类号 G11C7/00
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