发明名称 LASER PROCESSING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a laser processing method by abrasion, wherein an unnecessary damage is not generated at a part other than a part to be processed and the damage is little against a substrate wiring by a simple device constitution. SOLUTION: This method includes two processes of a first laser irradiation process, to form a laser light absorbing layer 15 at a planned removing part of a SiO2 membrane 18 being a transparent material, and a second laser irradiation process to evaporate and remove the layer 15 by the laser irradiation. In the first irradiation process, an ultraviolet laser light ejected from a ArF laser 11 irradiates the surface of a sample 14 in a processing chamber 13 being filled with the atmosphere of diborane 19 through a lens 12 so as to form the layer 15. In the second irradiation process, the light with lower strength than a normal processing threshold irradiates the later 15 being formed in this way by using the same optical system, so as to evaporate the layer 15 and form a desired via-hole.</p>
申请公布号 JPH11188495(A) 申请公布日期 1999.07.13
申请号 JP19980099213 申请日期 1998.04.10
申请人 NEC CORP 发明人 SEKI YUKO
分类号 B23K26/00;B23K26/18;B23K26/42;C03C23/00;H01L21/302;H01L21/311;H01L21/3205;H01L23/52;(IPC1-7):B23K26/18;H01L21/320 主分类号 B23K26/00
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