| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film cold cathode that a mean free path is improved at an electron acceleration layer and an electron irradiating efficiency is improved by using a single crystal intrinsic semiconductor as the same kind as a substrate or a polycrystal intrinsic semiconductor as a layer on which a high electric field is applied instead of a non-crystal insulating body. SOLUTION: This thin film cold cathode irradiates electrons in the vacuum utilizing hot electrons accelerated in a solid. An n-type semiconductor substrate 1 and a intrinsic semiconductor 2 formed on the n-type semiconductor substrate 1 and a thin film electrode 3 formed on the intrinsic semiconductor 2 are provided to accelerate electrons by an electric field applied to the intrinsic semiconductor 2.</p> |
