发明名称 |
Aluminum gallium nitride heterojunction bipolar transistor |
摘要 |
A heat tolerant, frequency responsive transistor for use in the microwave region includes a collector region, a base region overlying the collector region, and an emitter region including an AlGaN layer overlying at least part of said base region, forming a heterojunction between said base region and said emitter region. The emitter region may include two layers. The HBT may be mounted on a SiC or sapphire substrate. The HBT may include a buffer layer between the substrate and the collector region.
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申请公布号 |
US5923058(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19970795807 |
申请日期 |
1997.02.05 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
AGARWAL, ANANT K.;MESSHAM, ROWAN L.;DRIVER, MICHAEL C. |
分类号 |
H01L29/20;H01L29/267;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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