| 摘要 |
Applicant has discovered that the dielectric constant of Ta2O5 can be significantly enhanced by the addition of small quantities of TiO2. Specifically, if Ta2O5 is doped with more than about 3 mole percent of TiO2 the doped material will have a dielectric constant higher than the undoped material. For example, at a ratio of 0.92 Ta2O5:0.08TiO2, the dielectric constant is enhanced by a factor of more than three. Because both Ta and Ti are compatible with current microelectronics processing, the new dielectric can be used to make capacitors of reduced size with but minor modifications of conventional processes.
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