SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To improve the connection reliability between a first-layer wiring and a second-layer wiring which are disposed with a thick insulating film therebetween formed in the same layer as a multilevel capacitor. SOLUTION: The difference in levels due to capacitors C is reduced by an insulating film 24 which is formed in the same layer as that of the capacitor. Wiring grooves 31 are formed near the surface of an insulating film 30 the surface of which is planarized by chemical mechanical polishing(CMP) method and connecting holes 33 are formed on the underside of the bottom of the wiring grooves 31. Second-layer wirings 32 containing copper are formed in the wiring grooves 31 and connecting parts 34 containing copper are formed in the connecting holes 33. The second-layer wirings 32 and first-layer wirings 18 are connected through the connecting parts 34 the length of which is reduced. The second-layer wirings 32 and the connecting parts 34 are formed integrally by a damascene method using the CMP method.