| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a light emitting element of high performance by preventing generation of cracks when b film thickness of N-ALx Ga1-x N (O<x<=1) is increased or Al composition is increased, in the case that N-GaN and N-Alx Ga1-x N (0<x<=1) are grown in order on a buffer layer of a sapphire substrate. SOLUTION: A sapphire substrate 11 is cooled at a temperature of 450 deg.C, TMG, TMI, carrier gas, etc., are made to flow, and an InGaN buffer layer 12 of 100 nm in thickness is grown. The sapphire substrate 11 is heated at a temperature of 1100 deg.C, TMG, SiH4 , carrier gas, etc., are made to flow, and an N-type GaN layer 13 of 4 μm in thickness is grown. While the temperature of the substrate is maintained, the above carrier gas and the like are made to flow, and an N-type Al0.15 Ga0.85 N layer 14 is grown. Mixed crystal of the In based InGaN buffer layer 12 is soft so that cracks are not generated in the GaN layer, even when the Al composition of an AlGaN clad layer 14 is 15% and the film thickness is 350 nm, and a gallium nitride based compound semiconductor can be manufactured. |
