| 摘要 |
<p>A method of providing a gettering scheme in the manufacture of individual Silicon-On-Insulator (SOI) integrated circuits from a SOI wafer containing a number of such integrated circuits includes the steps of providing a gettering material in scribe lanes along which the SOI wafer is to be diced to obtain the individual SOI integrated circuits. The SOI wafer is then diced along the scribe lanes, leaving a portion of the gettering material on the diced edges of the individual integrated circuits. This method provides a simple and effective method for gettering in SOI technology in which diffusing impurities can be trapped before diffusing into the active area of the integrated circuits.</p> |
