Semiconductor memory with block write mode, for writing data values in numerous memory cells

摘要

The memory cell field section has several part-blocks with a number of cell columns and a redundant cell column for replacing a faulty one. Each part-block is divided into several column groups. A column selector reacts to an externally applied address signal for selecting a corresponding cell column in the cell field section. The selector contains a column selecting signal (CSL) generator (104,200c) for selecting a column for each group in the block write mode, and an address comparator (450) and programmer (500) for selecting a redundant column, and deactivating the column selection signal. A write system selects a cell line according to an address signal and provides writing in the block mode.