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发明名称
Verfahren zum Herstellen einer Halbleitervorrichtung mit einem isolierenden Zwischenschichtfilm aus Phosphorsilikatglas
摘要
申请公布号
DE68929010(D1)
申请公布日期
1999.07.08
申请号
DE1989629010
申请日期
1989.11.27
申请人
KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP
发明人
MAEDA, SATOSHI INTELLECTUAL PROPERTY DIVISION, TOKYO, JP;SAWADA, SHIZUO INTELLECTUAL PROPERTY DIVISION, TOKYO, JP
分类号
H01L21/3205;H01L21/3105;H01L21/768;H01L23/52;(IPC1-7):H01L21/310
主分类号
H01L21/3205
代理机构
代理人
主权项
地址
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