| 摘要 |
A method and an apparatus are for rapidly processing dielectric substrates using laser beams. A pulsed laser beam having a pulse repetition frequency greater than approximately 50 kHz and having pulse lengths shorter than approximately 200 ns is used for this purpose. Given a suitable choice of the parameters which characterize the processing laser beam, it is possible to ensure both a high throughput of bored holes and a high hole quality. With the use of a Q-switched CO2 laser, a wavelength of approximately 9.2 mum and a pulse energy of approximately 0.7 mJ are used. As a result, by way of example, 500 holes per second can be bored into an LCP substrate having a thickness of 0.4 mm. The high throughput and the simultaneously high hole quality are a consequence of the wavelength chosen, the short pulse lengths, the high repetition rate and the pulse energy that is likewise high compared with conventional laser processing apparatuses in the area of electronic fabrication.
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