发明名称 |
Semiconductor device having aluminum contacts or vias and method of manufacture therefor |
摘要 |
<p>A semiconductor device and a method of manufacture therefor. The semiconductor device includes: (1) a substrate having a recess therein, (2) an aluminum-alloy layer located over at least a portion of the substrate and filling at least a portion of the recess and (3) a protective metal layer at least partially diffused in the aluminum-alloy layer, the metal protective layer having a high affinity for oxygen and acting as a sacrificial target for oxygen during a reflow of the aluminum-alloy layer.</p> |
申请公布号 |
EP0866498(A3) |
申请公布日期 |
1999.07.07 |
申请号 |
EP19980301803 |
申请日期 |
1998.03.11 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
MERCHANT, SAILESH M.;NGUYENPHU, BINH |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/768;H01L21/320 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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