发明名称 |
Composite substrate for heat-generating semiconductor device and semiconductor decice and semiconductor apparatus using the same |
摘要 |
A composite substrate 1 on which a heat-generating semiconductor device 7 is to be mounted, comprises a composite layer 2, which includes a matrix 5 made of a metal having a high thermal conductivity and a fibrous or particulate ceramic dispersion material 4 having low thermal expansion properties, and a metal layer 3 bonded by a brazing material or solder 10 to one main surface of the composite layer. The heat-generating semiconductor device 7 for a substrate 8 with low thermal expansion properties having the heat-generating semiconductor device provided thereon, is mounted on the other main surface of the composite layer, possibly via solder 6 and a metal film 9. The metal matrix 5 and the metal layer 3 may be aluminium or copper or alloys thereof. The composite substrate may be formed by pressure casting. |
申请公布号 |
GB2327150(B) |
申请公布日期 |
1999.07.07 |
申请号 |
GB19980023805 |
申请日期 |
1997.03.13 |
申请人 |
THE * FURUKAWA ELECTRIC CO LTD |
发明人 |
JUNJI * NINOMIYA;AKIRA * HIDENO;TAKAHIRO * OKADA |
分类号 |
H01L21/48;H01L23/373;H05K1/05;H05K3/00;(IPC1-7):H01L23/373 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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