Recrystallized silicon carbide sintered material and manufacturing method thereof

摘要

A recrystallized SiC sintered material is composed of 0.01 to 2 % by weight of SiO2 and 99.99 to 98 % by weight of SiC, and has a resistivity controlled to 500 to 50000 OMEGA .cm. The recrystallized SiC sintered material is manufactured by heating the SiC molded body up to 2000 DEG C in two hours or longer at a pressure of 0.01 to 2 atms while flowing an inert gas at a rate of 0.01 to 10 times of an effective volume (a heating region) of a kiln per minute and then heating up to 2000 to 2500 DEG C at a pressure of 0.5 to 2 atms. The recrystallized SiC sintered material has an enhanced resistivity of a recrystallized SiC ceramic, an electrical insulation property, a remarkably improved thermal conductivity, and strength and corrosion resistance as original merits of the recrystallized SiC.