| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject abrasive capable of grinding the surface to-be- ground of SiO2 insulation films or the like in high speed without causing any scratches, therefore, useful for the production of semiconductor devices, by including a slurry which is prepared by dispersing cerium oxide particles constituted of a plurality of primary grains and having crystal grain boundaries in a medium. SOLUTION: This abrasive comprises a slurry which is prepared by dispersing in a medium such as water cerium oxide particles 60-1,500 nm in the median of size having crystal grain boundaries constituted of a plurality of primary grains 30-25 nm in the median of size having the maximum size of <=600 nm and a size of 10-600 nm as a whole. It is preferable that the cerium oxide particles having crystal grain boundaries account for 5-100 vol.% of the total cerium oxide particles and have the maximum size of <=3,000 nm, and an ammonium polyacrylate salt is used as dispersant. |
