发明名称 |
Plasma processing apparatus |
摘要 |
A lower insulating member 13 is arranged around a suscepter 6 as a lower electrode, and an upper insulating member 31 is arranged around an upper electrode 21. An outer end portion 31a of the upper insulating member is positioned outside an lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than a gap G between electrodes. Diffusion of a plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner walls of a processing container 3 are not sputtered.
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申请公布号 |
US5919332(A) |
申请公布日期 |
1999.07.06 |
申请号 |
US19960659387 |
申请日期 |
1996.06.06 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOSHIISHI, AKIRA;OGASAWARA, MASAHIRO;HIROSE, KEIZO;NAGASEKI, KAZUYA;TOMOYOSHI, RIKI;AOKI, MAKOTO |
分类号 |
C23C16/509;H01J37/32;(IPC1-7):C23F1/02;C23C16/00 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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