发明名称 THIN-FILM CAPACITOR AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To improve insulation characteristics using a Perovskite oxide dielectric with a large relative dielectric constant, by making specific an element ratio of an oxide in at least one-layer granular structure of the Peroviskite type oxide being laminated at least by two layers. SOLUTION: For obtaining granular structure, an amorphous oxide is laminated by a CVD method or the like and is crystallized by a heat treatment. In this case, by setting the ratio of A element to B element when an oxide thin film is expressed by a general expression ABO3 (A and B indicate a divalent metal element and a quadrivalent metal element, respectively. Both A and B have at least two kinds of metal elements.) to 1.1-1.5, thus improving reproducibility of the intricate granular structure. As a result, the granular film with an improved insulation property can be manufactured with an improved reproducibility, and a large relative dielectric constant is retained and at the same time a high insulation property can be obtained by laminating the granular structure to columnar structure with a large relative permittivity.
申请公布号 JPH11177051(A) 申请公布日期 1999.07.02
申请号 JP19970340163 申请日期 1997.12.10
申请人 NEC CORP 发明人 SONE SHUJI
分类号 H01L27/04;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108 主分类号 H01L27/04
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