| 摘要 |
PROBLEM TO BE SOLVED: To provide an electric charge beam exposure system in which an aligning time period is reduced, and a change width such as image formation position of a small field, magnification, rotation, etc., can be decreased, and an electric charge beam exposure method using the same. SOLUTION: When pattern density on a small field to be transferred is large, a hole 18 having a hole diameter smaller than the central hole of an aperture is selected by a deflector 8. Beams passed through the hole 18 are returned to an optical axis by a deflector 9 and illuminate a small field 12' having large pattern density. When pattern density on a small field on a mask is small, a hole 19 larger than the central hole of an aperture 11 is selected by the deflector 8. When pattern density of a small field on a mask is medium, the central hole of the aperture 11 is selected without being deflected by the deflector 8. |
