SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device. SOLUTION: At the time of forming a pair of impurity areas 102 and 103 in an active layer, a comb-line shaped intrinsic or practically intrinsic semiconductor area 104 is formed by a mask. The area 104 is composed of a part effectively functioning as a channel area and the part functioning as a heat sink without forming a channel. That is, by forming the heat sink by the same material as a channel formation area, a heat radiation effect is improved.