| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element, which can emit short-wavelength light having superior monochromaticity from a blue color band to a green color band with a high intensity. SOLUTION: In a double heterojunction type group III nitride semiconductor light emitting element provided with a light emitting layer 2 composed of a group III nitride semiconductor containing indium, the light emitting layer 2 is constructed in a multiphase structure composed of an essential phase Pm and a subordinate phase Ps containing indium at a concentration (percentage composition) which is different from that in the essential phase Pm. In addition, the area occupied by the essential phase Pm on the surface of the light emitting layer 2 is adjusted to >=65% of the surface area of the layer 2. |
