发明名称 |
IMPROVED TECHNIQUES FOR ETCHING WITH A PHOTORESIST MASK |
摘要 |
A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer is disposed below a photoresist mask. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer. |
申请公布号 |
WO9933095(A1) |
申请公布日期 |
1999.07.01 |
申请号 |
WO1998US26502 |
申请日期 |
1998.12.11 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HASELDEN, BARBARA;LEE, JOHN;ARIMA, CHAU;CHIU, EDDIE |
分类号 |
G03F7/40;H01L21/027;H01L21/302;H01L21/3065;H01L21/311 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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