Group III-V type nitride compound semiconductor light-emitting device

摘要

A group III-V type nitride compound semiconductor light-emitting device employing compound semiconductors the lattices of which are matched to each other and having a large band discontinuity value between the semiconductor layers is characterized in that it is a light-emitting device obtained by junction of a barrier layer and an active layer and that the active layer contains Nb. The present invention provides a group III-V type nitride compound semiconductor light-emitting device which has low threshold current and low threshold voltage characteristics.