发明名称 |
Method for fabricating capacitor-over-bit line (COB) dynamic random access memory (DRAM) using tungsten landing plug contacts and Ti/TiN bit lines |
摘要 |
A method and structure are described for making DRAM devices having bit line contacts for memory cells and landing plugs for peripheral devices with a Ti/TiN barrier layer patterned to form bit lines and local interconnections. FETs are formed on the substrate for memory cells and for devices in the peripheral area. A planar first insulating layer is deposited, and contact openings are formed to the devices. A Ti/TiN barrier layer is deposited in the contact openings and a tungsten (W) layer is deposited and selectively etched back to the barrier layer. The barrier layer is then patterned to form bit lines and local interconnections. A second insulating layer is deposited, and capacitor node contact openings are etched and filled with polysilicon to form node contacts on which capacitors are fabricated. A planar third insulating layer is formed and multilevel contact openings are etched to landing plugs. Metal plugs are formed in the multilevel contact openings, and a first metal is deposited and patterned to form the first level of metal interconnections. The reduced height of the Ti/TiN bit lines and the landing plug contacts significantly reduce the aspect ratio of the multilevel contacts, allowing for fabricating DRAM circuits with higher density and improved reliability.
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申请公布号 |
US5918120(A) |
申请公布日期 |
1999.06.29 |
申请号 |
US19980121711 |
申请日期 |
1998.07.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG, JENN MING |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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