| 摘要 |
PROBLEM TO BE SOLVED: To obtain a substrate composition sintered at a low temperature, having a low dielectric constant and a high Q-value, and capable of being sufficiently used as an electric insulation material for a high frequency circuit. SOLUTION: This substrate composition sintered at a low temperature is constituted of 3-80 wt.% crystalline SiO2 and 20-97 wt.% glass, and the glass is allowed to include SiO2 , B2 O3 and/or K2 O. The substrate composition sintered at a low temperature has <=5.8 specific dielectric constant εr and >=300 Q-value, for example, at a high frequency of 3 GHz. |
