| 摘要 |
In a method of manufacturing a charge coupled device, a channel layer is formed on a surface of a semiconductor substrate. Then, first layer transfer electrodes are formed in a charge transfer direction above the channel layer via a first insulating film. Subsequently, second layer transfer electrodes are formed such that each of the second layer transfer electrodes is disposed between two of the first layer transfer electrodes without any portion overlapping the first layer transfer electrodes in a plane structure. The second layer transfer electrodes may be patterned after a polysilicon film is deposited and polished or may be polished after the polysilicon film is deposited and patterned.
|
