| 摘要 |
<p>Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70 % of the current in an annular region that is the outer 15 % of a rod due to the 'skin effect'.</p> |
