发明名称 |
PRECHARGE CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A precharge circuit of a semiconductor memory device precharges bit lines by using input/output data lines. In the precharge circuit for a semiconductor memory device, true and complement input/output data lines selectively receives one of a precharge voltage and a data input/output control signal and precharges true and complement bit lines of the semiconductor memory device or performs a normal information sensing operation in response to the received signal. True and complement multiplexors select one of the precharge voltage and the data input/output control signal in response to a precharge control signal to transmit to the true and complement input/output data lines. According to the precharge circuit, since the precharge operation is performed by using data input/output lines without an additive precharge circuit. Thus an area increase due to a precharge circuit can be removed when designing a DRAM to thereby reduce a design area thereof. |
申请公布号 |
WO9931711(A2) |
申请公布日期 |
1999.06.24 |
申请号 |
WO1998KR00430 |
申请日期 |
1998.12.15 |
申请人 |
DAEWOO ELECTRONICS CO., LTD. |
发明人 |
KIM, DAE-SOON |
分类号 |
G11C7/10;G11C7/12;G11C11/4096 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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