Integrierte Anordnung mit einer Struktur zum Schutz gegen hohe elektrische Felder
摘要
An integrated device presenting a structure for protection against electric fields. The protection structure is formed by a first region of conducting material (34) connected electrically to the gate/source region (6) of the device and at a first potential, and by a second region of conducting material (35) connected electrically to the drain region (15) of the device and at a second potential differing from the first. The first region of conducting material (34) is comb-shaped, and presents a first number of fingers (32) separated by a number of gaps; and the second region of conducting material (35) presents portions (33) extending at the aforementioned number of gaps and also forming a comb structure, so that the body of semiconductor material (1) of the device sees a protection region formed by a pair of interlocking comb structures and at an intermediate potential between the first and second potentials. <IMAGE>
申请公布号
DE69415987(T2)
申请公布日期
1999.06.24
申请号
DE1994615987T
申请日期
1994.11.08
申请人
STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND/MILANO, IT
发明人
CONTIERO, CLAUDIO, I-20090 BUCCINASCO, IT;DEPETRO, RICCARDO, I-28037 DOMODOSSOLA, IT