Vertical bipolar transistor suitable for integration

摘要

The subcollector is formed by a highly conductive, polycrystalline material. The polycrystalline material is not formed by conversion of the monocrystalline semiconductor material, forming the component structure, but is introduced into the circuit externally. The formation is obtained by isotropic lateral etching of the insulating base/insulation film under the monocrystalline, active, structured parts of the semiconductor layer forming the collector. In its after-processing formed cavities are refilled by the highly conductive polycrystalline material by CVD.