| 摘要 |
PROBLEM TO BE SOLVED: To restrain accelerated diffusion of impurities by restraining point defects distribution, which are generated at ion implanting, regarding a forming method of a shallow diffused layer of a very thin CMOS. SOLUTION: When impurities which form a p<+> -diffused layer are boron, the implantating acceleration voltage for boron is set at most 1 keV, in order to restrain the amount of point defects which are generated in a substrate 1 and also to suppress channeling. When boron is implanted with an energy of at least 1 keV, the surface of the substrate 1 becomes non-crystalline. Immediately after the boron implantation, the non-crystalline layer is thicker than the depth of boron concentration 1×10<15> /cm<2> . The boron implantation is performed under the condition that the amount of point defects which are introduced at ion implanting in non-crystallization is minimized.
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