PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the degradation in an aperture ratio without increasing the exclusive area rate of additive capacitors even if the additive capacitors are increased by using a material contg. an oxide of a metal consisting essentially of Ta as a dielectric film of the superposed parts constituting the additive capacitors. SOLUTION: An SiO2 ground surface film 20 for protection of a translucent glass substrate 14 is formed on this glass substrate. Next, the metal Ta is deposited and is etched to form desired gate wiring patterns 22, 23. The difference in level at the ends of the Ta patterns is provided with a taper. The Ta gate wiring patterns 22, 23 are anodically oxidized to form an anodically oxidized Ta film 24. Next, an SiN gate insulating film 21, an a-SiH(i) film 8 and an SiN channel protective film 25 are continuously deposited and is etched, by which island-shaped patterns of the SiN channel protective film 25 are formed. Next, the island-shaped patterns of a-Si:H(n-) 15 and a-Si: H(i) 8 are formed. Signal line patterns 1 and source electrode patterns 5 are formed. Finally, a protective film 12 is formed.