| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can suppress the wire breakdown of a bit wire. SOLUTION: This semiconductor memory device has a memory cell part 1, which contributes to the storing of information, a dummy cell part which does not contribute to the memory of the information, and bit wires 8a-8d and 18a-18d. The dummy cell part 2 includes active regions 4a and 4b, a separating oxide film surrounding the active region and a storage node 12, which is connected electrically to the active region 4b. The bit wires 18a-18b have relatively larger widths than those of the other parts in a dummy cell part 2. Storage nodes 12 are formed on the bit wires 18a-18d at the dummy cell part 2. |
