| 摘要 |
PROBLEM TO BE SOLVED: To reconcile the production process of a DRAM(dynamic random access memory) with the existing production process of the DRAM by a method wherein the DRAM is produced by a method wherein first to third oxide layers are deposited and with windows and conductive plugs formed in the oxide layers, a metal regions is formed on each oxide layer and thereafter, a fourth flattened oxide layer is deposited. SOLUTION: A planarized oxide region or a layer 52 is formed on a substrate 16. Windows 54 are formed in the layer 52, the windows 54 are filled with a proper conductive material and conductive plugs are formed in the windows. A metal region 28 formed by patterning exists on the flattened oxide layer 52. Another planarized oxide region or layer 56 exists on the layer 52 and the region 28 formed through by patterning. The planarized oxide layer 56 has windows/plug regions 58 in the interior thereof. Metal regions 61 formed by patterning respectively exist on capacitors 12. Moreover, another planarized oxide region or layer 63 exists on the layer 56, the capacitors 12 and the regions 61 have windows/plug regions 65 in the interior thereof. The last planarized oxide region or layer 69 exists on the layer 63 and regions 67. |
