| 摘要 |
PROBLEM TO BE SOLVED: To obtain a small trench capacitor having sufficiently low parasitic leakage. SOLUTION: A transistor, which includes a gate and first and second diffused regions are provided. A trench capacitor in a substrate electrically connects a dielectric color part 168 at the upper-side part of a trench, a diffused region embedded in a substrate surrounding the lower part of the trench capacitor, a transitor and the capacitor. A node diffused region is included on a collar part. A third diffused region 269 is provided in a substrate neighboring the color part. In order to decrease the leakage, an adequate concentration of doping agent for enhancing the threshold voltage of the gate of a parasitic transistor, which is formed of the color part, the embedded diffused region and node diffusion, is provided. |
