发明名称 NACELLE D'EPITAXIE POUR DEPOT D'UNE COUCHE DE CDHGTE PAR EPITAXIE EN PHASE LIQUIDE SUR UN HETEROSUBSTRAT ET PROCEDE DE DEPOT DE CDHGTE SUR UN HETEROSUBSTRAT UTILISANT CETTE NACELLE
摘要 The invention concerns an epitaxy boat for the liquid phase epitaxial deposit of a CdHgTe layer on a heterosubstrate without any risk of dissolving the heterosubstrate in the epitaxy solution. Said boat comprises two horizontal slides mutually offset such that the tellurium solution is brought above a selected zone of the heterosubstrate. The invention also concerns a method for depositing a CdHgTe layer on a heterosubstrate using said boat. The invention is applicable to the production of infrared radiation detectors.
申请公布号 FR2763608(B1) 申请公布日期 1999.06.18
申请号 FR19970006175 申请日期 1997.05.21
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 PELLICIARI BERNARD;POLGE BERNARD
分类号 C30B19/04;C30B19/06 主分类号 C30B19/04
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