| 摘要 |
PROBLEM TO BE SOLVED: To extend the refresh cycle and to reduce power consumption at data storage standby by varying voltages set to a plate electrode to be different for data read and data write. SOLUTION: A signal for turning on MOS transistors Tr1 and T4 is supplied to a line A and plate electrodes 4 and 6 are retained at Vcc/2. Therefore, when writing data are equal to 1, the potential of the plate electrodes reaches Vss and the amount of electric charge being charged to a memory capacitor increases as compared with a case when the potential is fixed to Vss/2, and time when an electric charge leaks from the memory capacitor is extended. When the write data are equal 0, the amount of electric charge being charged to the memory similarly increases and time when the electric charge leaks is extended, thus extending time until the amount of electric charge is reached where such trouble as the occurrence of the erroneous recognition of data occurs and extending a refresh cycle. |
