| 摘要 |
PROBLEM TO BE SOLVED: To form a cover film having barrier properties with respect to hydrogen on a capacitor, without deteriorating ferroelectric characteristic. SOLUTION: A silicon nitride film 5 is formed on a capacitor in regions which exclude the part of an upper electrode layer 6, and a metal nitride film 5 is formed on a section, to which the silicon nitride film 5 has not been shaped. A lower electrode layer 3 and a dielectric layer 4 are etched selectively, the silicon nitride film 5 is etched selectively on the dielectric layer 4, upper electrode layers 6 and TiN layers 7 are formed continuously, after a heat treatment process and the upper electrode layers 6 and the TiN layers 7 are etched selectively. |
