| 摘要 |
The transistor comprises a gate insulating film 2, a gate electrode 3, a source-drain region 7 and a sidewall insulating film formed at a sidewall of the gate electrode, wherein the sidewall insulating film has a double layered structure made up of a TEOS NSG film 5 which is in contact with both the sidewall of the gate electrode and the surface of the semiconductor substrate and a silicon nitride film 6 which is formed on the TEOS NSG film. The transistor provides an improvement in the hot carrier resistance and is highly reliable, with the ON current showing little change over a long period. |
