发明名称 |
Method of fabricating circuits |
摘要 |
A method of fabricating an integrated circuit device is described in which fluorine ions are implanted into the patterned photoresist and the exposed polysilicon layer prior to etching the polysilicon. The ion implantation minimizes the chemical reaction between the photoresist and etchant, thereby significantly reducing the formation of polysilicon etch delta, and also significantly reducing etch delta variation due to pattern density variations.
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申请公布号 |
US5912187(A) |
申请公布日期 |
1999.06.15 |
申请号 |
US19970871489 |
申请日期 |
1997.06.10 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
BLASKO, JOSEPH PAUL;GRIFFIN, ROBERT JOHN |
分类号 |
H01L21/28;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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