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发明名称
HIGH SPEED SEMICONDUCTOR MEMORY WITH BURST MODE
摘要
申请公布号
KR100203605(B1)
申请公布日期
1999.06.15
申请号
KR19960041210
申请日期
1996.09.20
申请人
NEC CORPORATION
发明人
FUJITA, MAMORU
分类号
G11C11/407;G11C7/00;G11C7/10;G11C11/409;(IPC1-7):G11C11/407
主分类号
G11C11/407
代理机构
代理人
主权项
地址
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