发明名称 |
INTERCONNECTOR OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
Wiring for a semiconductor device which is suitable for high density device packing, and a method for forming the same, are disclosed. The wiring includes: impurity regions formed in a substrate on both sides of an insulated gate electrode; a first conduction layer formed on the impurity regions; and a second conduction layer formed in contact with the first conduction layer on one side of the gate electrode. The method includes the steps of: forming impurity regions in a substrate on both sides of an insulated gate electrode; forming a first conduction layer on the impurity regions; and forming a second conduction layer in contact on one side of the gate electrode with the first conduction layer. |
申请公布号 |
KR100198634(B1) |
申请公布日期 |
1999.06.15 |
申请号 |
KR19960038789 |
申请日期 |
1996.09.07 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
LEE, CHANG-SEI |
分类号 |
H01L21/28;H01L21/768;H01L21/8242;H01L23/485;H01L27/108;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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