| 摘要 |
A method for manufacturing a deep-submicron P-type metal-oxide semiconductor shallow junction utilizes an electron terminal structure with a base covered by a layer containing boron, germanium, and silicon. This layer containing boron, germanium, and silicon ("B-Ge-Si") is used as a shield during ion implanting and as an impurity ion source to form a high diffusion ion concentration at a shallow junction of the semiconductor base or substrate. The B-Ge-Si layer can be thoroughly removed using selective corrosive erosion. Due to the simplicity of this invention's manufacturing process, it can be used for deep-submicron PMOS component production, and thus, it has great practical value.
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